| Citation: |
Yu Lijuan, Zhao Hongquan, Du Yun, Huang Yongzhen. 1.55μm InP-InGaAsP Quantum-Well Lasers Fabricatedon Si Substrates by Wafer Bonding[J]. Journal of Semiconductors, 2006, 27(4): 741-743.
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Yu L J, Zhao H Q, Du Y, Huang Y Z. 1.55μm InP-InGaAsP Quantum-Well Lasers Fabricatedon Si Substrates by Wafer Bonding[J]. Chin. J. Semicond., 2006, 27(4): 741.
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1.55μm InP-InGaAsP Quantum-Well Lasers Fabricatedon Si Substrates by Wafer Bonding
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Abstract
1.55μm InP-InGaAsP quantum-well lasers are fabricated on Si substrates by wafer bonding.The laser structures are designed and grown by MOCVD and bonded to Si wafers The laser are then fabricated on the bonded thin films.Room-temperature operation is achieved for 20μm-wide mesa lasers with a threshold current of 160mA and an output power of 10mW at 350mA.-
Keywords:
- wafer bonding,
- long-wavelength laser,
- Si substrate
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References
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Proportional views
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