Chin. J. Semicond. > 2003, Volume 24 > Issue 9 > 966-971
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应变SiGe沟道pMOSFET的击穿特性

杨荣 and 罗晋生

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Key words: 应变硅锗, pMOSFET, 击穿, 模拟, 分析

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(9): 966-971
      杨荣, 罗晋生. 应变SiGe沟道pMOSFET的击穿特性[J]. 半导体学报(英文版), 2003, 24(9): 966-971.
      Citation:
      杨荣, 罗晋生. 应变SiGe沟道pMOSFET的击穿特性[J]. 半导体学报(英文版), 2003, 24(9): 966-971.
      shu

      • Received Date: 2015-08-20

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