Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 573-579
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刻划的富硅二氧化硅/p-Si结构的光致发光和电致发光

孙永科 , 崔晓明 , 张伯蕊 , 秦国刚 , 马振昌 and 宗婉华

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Key words: 磁控溅射, 光致发光, 电致发光, 高斯峰, 密度缺陷区, 发光中心, 吸除作用

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 573-579
      孙永科, 崔晓明, 张伯蕊, 秦国刚, 马振昌, 宗婉华. 刻划的富硅二氧化硅/p-Si结构的光致发光和电致发光[J]. 半导体学报(英文版), 2001, 22(5): 573-579.
      Citation:
      孙永科, 崔晓明, 张伯蕊, 秦国刚, 马振昌, 宗婉华. 刻划的富硅二氧化硅/p-Si结构的光致发光和电致发光[J]. 半导体学报(英文版), 2001, 22(5): 573-579.
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      • Received Date: 2015-08-20

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