Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Jiang Hai; Lü Jian; Xu Jianhua; Jiang Yadong

Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1824-1829

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Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Jiang Hai, Lü Jian, Xu Jianhua and Jiang Yadong

+ Author Affiliations

Abstract: A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.The use of dynamic element matching enables us to solve problems caused by IC technology mismatching.Simulated results using CSMC 0.5μm mixed signal technology show that the accuracy is 0.15℃ and the linearity is 0.15%.Measured results of several different chips show that the accuracy is within 0.6℃ and the linearity is within 0.68%.The power dissipation is 587μW and the chip area is 225μm×95μm.The output is an analog voltage signal,which is easy to collect,process,and apply.

Key words: dynamic element matching, substrate bipolar transistor, temperature sensor

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Received: 18 August 2015 Revised: 09 July 2007 Online: Published: 01 November 2007

A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.The use of dynamic element matching enables us to solve problems caused by IC technology mismatching.Simulated results using CSMC 0.5μm mixed signal technology show that the accuracy is 0.15℃ and the linearity is 0.15%.Measured results of several different chips show that the accuracy is within 0.6℃ and the linearity is within 0.68%.The power dissipation is 587μW and the chip area is 225μm×95μm.The output is an analog voltage signal,which is easy to collect,process,and apply.

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