Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Jiang Hai; Lü Jian; Xu Jianhua; Jiang Yadong

Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1824-1829

PAPERS

Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Jiang Hai, Lü Jian, Xu Jianhua and Jiang Yadong

+ Author Affiliations

Abstract: A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.The use of dynamic element matching enables us to solve problems caused by IC technology mismatching.Simulated results using CSMC 0.5μm mixed signal technology show that the accuracy is 0.15℃ and the linearity is 0.15%.Measured results of several different chips show that the accuracy is within 0.6℃ and the linearity is within 0.68%.The power dissipation is 587μW and the chip area is 225μm×95μm.The output is an analog voltage signal,which is easy to collect,process,and apply.

Key words: dynamic element matching, substrate bipolar transistor, temperature sensor

1	Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, et al. Journal of Semiconductors, 2022, 43(11): 114101. doi: 10.1088/1674-4926/43/11/114101
2	Observation of exciton polariton condensation in a perovskite lattice at room temperature Jun Zhang Journal of Semiconductors, 2020, 41(3): 030201. doi: 10.1088/1674-4926/41/3/030201
3	Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes Degang Zhao, Jing Yang, Zongshun Liu, Ping Chen, Jianjun Zhu, et al. Journal of Semiconductors, 2017, 38(5): 051001. doi: 10.1088/1674-4926/38/5/051001
4	A simple chemical route to synthesize the umangite phase of copper selenide (Cu₃Se₂) thin film at room temperature Balasaheb M. Palve, Sandesh R. Jadkar, Habib M. Pathan Journal of Semiconductors, 2017, 38(6): 063003. doi: 10.1088/1674-4926/38/6/063003
5	Substrate temperature dependent studies on properties of chemical spray pyrolysis deposited CdS thin films for solar cell applications Kiran Diwate, Amit Pawbake, Sachin Rondiya, Rupali Kulkarni, Ravi Waykar, et al. Journal of Semiconductors, 2017, 38(2): 023001. doi: 10.1088/1674-4926/38/2/023001
6	A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact Mengxuan Jiang, Z. John Shen, Jun Wang, Xin Yin, Zhikang Shuai, et al. Journal of Semiconductors, 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011
7	Temperature sensor based on composite film of vanadium complex (VO₂(3-fl)) and CNT Kh. S. Karimov, M. Mahroof-Tahir, M. Saleem, M. Tariq Saeed Chani, A. Khan Niaz, et al. Journal of Semiconductors, 2015, 36(7): 073004. doi: 10.1088/1674-4926/36/7/073004
8	A low-power CMOS smart temperature sensor for RFID application Liangbo Xie, Jiaxin Liu, Yao Wang, Guangjun Wen Journal of Semiconductors, 2014, 35(11): 115002. doi: 10.1088/1674-4926/35/11/115002
9	Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor Shibir Basak, Pranav Kumar Asthana, Yogesh Goswami, Bahniman Ghosh Journal of Semiconductors, 2014, 35(11): 114001. doi: 10.1088/1674-4926/35/11/114001
10	A trench accumulation layer controlled insulated gate bipolar transistor with a semi-SJ structure Binghua Li, Frank X. C. Jiang, Zhigui Li, Xinnan Lin Journal of Semiconductors, 2013, 34(12): 124001. doi: 10.1088/1674-4926/34/12/124001
11	A process/temperature variation tolerant RSSI Lei Qianqian, Lin Min, Shi Yin Journal of Semiconductors, 2012, 33(12): 125010. doi: 10.1088/1674-4926/33/12/125010
12	High temperature characterization of double base epilayer 4H-SiC BJTs Zhang Qian, Zhang Yuming, Zhang Yimen, Wang Yuehu Journal of Semiconductors, 2010, 31(11): 114005. doi: 10.1088/1674-4926/31/11/114005
13	The Bipolar Field-Effect Transistor: VII. The Unipolar Current Mode for Analog-RF Operation (Two-MOS-Gates on Pure-Base) Jie Binbin, Sah Chih-Tang Journal of Semiconductors, 2009, 30(3): 031001. doi: 10.1088/1674-4926/30/3/031001
14	An ultra-low-power CMOS temperature sensor for RFID applications Xu Conghui, Gao Peijun, Che Wenyi, Tan Xi, Yan Na , et al. Journal of Semiconductors, 2009, 30(4): 045003. doi: 10.1088/1674-4926/30/4/045003
15	A cross-coupled-structure-based temperature sensor with reduced process variation sensitivity Tie Meng, Cheng Xu Journal of Semiconductors, 2009, 30(4): 045002. doi: 10.1088/1674-4926/30/4/045002
16	Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al. Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004
17	Silicon Temperature Sensor with Inaccuracy of ±0.3℃ from -55 to 125℃ Feng Xiaoxing, Wang Xin’an, Feng Jun, Ge Binjie, Zhang Xing, et al. Chinese Journal of Semiconductors , 2007, 28(12): 1972-1978.
18	Temperature Sensors Based on CMOS Sub-Threshold Characteristic Zhang Xun, Wang Peng, Jin Dongming Chinese Journal of Semiconductors , 2006, 27(9): 1676-1680.
19	Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity Zhu Kadi, Li Waisang Chinese Journal of Semiconductors , 2006, 27(3): 489-493.
20	Design of a Novel All-CMOS Built-In Temperature Sensor Lin Saihua, Yang Huazhong Chinese Journal of Semiconductors , 2006, 27(3): 551-555.

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 2843 Times PDF downloads: 1451 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 09 July 2007 Online: Published: 01 November 2007

A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.The use of dynamic element matching enables us to solve problems caused by IC technology mismatching.Simulated results using CSMC 0.5μm mixed signal technology show that the accuracy is 0.15℃ and the linearity is 0.15%.Measured results of several different chips show that the accuracy is within 0.6℃ and the linearity is within 0.68%.The power dissipation is 587μW and the chip area is 225μm×95μm.The output is an analog voltage signal,which is easy to collect,process,and apply.

Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Abstract

References

Proportional views

Catalog

Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content