0.1μｍ槽栅CMOS器件及相关特性

张晓菊; 马晓华; 任红霞; 郝跃; 孙宝刚

Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 532-535

CONTENTS

0.1μｍ槽栅CMOS器件及相关特性

+ Author Affiliations

Abstract: 通过实验成功得到了0.1μｍ槽栅结构CMOS器件，验证了理论结果的正确性，表明这是一种优良的小尺寸器件结构．该槽栅器件具有阈值电压漂移较小及较好抑制短沟道效应的特点，并分析了目前器件驱动电流较小的原因及解决办法．

1	ESD protection design for the gate oxide of an RF-LDMOS Jiang Yibo, Du Huan, Zeng Chuanbin, Han Zhengsheng Journal of Semiconductors, 2012, 33(4): 044007. doi: 10.1088/1674-4926/33/4/044007
2	ESD robustness studies on the double snapback characteristics of an LDMOS with an embedded SCR Jiang Lingli, Zhang Bo, Fan Hang, Qiao Ming, Li Zhaoji, et al. Journal of Semiconductors, 2011, 32(9): 094002. doi: 10.1088/1674-4926/32/9/094002
3	Avalanche behavior of power MOSFETs under different temperature conditions Lu Jiang, Wang Lixin, Lu Shuojin, Wang Xuesheng, Han Zhengsheng, et al. Journal of Semiconductors, 2011, 32(1): 014001. doi: 10.1088/1674-4926/32/1/014001
4	Diagram representations of charge pumping processes in CMOS transistors Huang Xinyun, Jiao Guangfan, Shen Chen, Cao Wei, Huang Daming, et al. Journal of Semiconductors, 2010, 31(8): 084003. doi: 10.1088/1674-4926/31/8/084003
5	Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts Li Dongmei, Huangfu Liying, Gou Qiujing, Wang Zhihua Chinese Journal of Semiconductors , 2007, 28(2): 171-175.
6	Reliability Model of Thin Oxide CMOS Liao Jingning, Guo Chunsheng, Liu Pengfei, Wu Yuehua, Li Zhiguo, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 257-261.
7	High Performance Gate Length 22nm CMOS Device withStrained Channel and EOT 1.2nm Xu Qiuxia, Qian He, Duan Xiaofeng, Liu Haihua, Wang Dahai, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 283-290.
8	Characteristics of Groove-Gate MOSFETs Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei Chinese Journal of Semiconductors , 2006, 27(11): 1994-1999.
9	深亚微米p+栅pMOSFET中NBTI效应及氮在其中的作用韩晓亮, 郝跃, 刘红侠 Chinese Journal of Semiconductors , 2005, 26(1): 84-87.
10	Characteristics of I sub,max Stress in 90nm-Technology nMOSFETs Chen Haifeng, Ma Xiaohua, Hao Yue, Cao Yanrong, Huang Jianfang, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2411-2415.
11	An Analytical Model for Polysilicon Quantization in MOS Devices Dai Yuehua, Chen Junning, Ke Daoming, Sun Jiae, Xu Chao, et al. Chinese Journal of Semiconductors , 2005, 26(11): 2164-2168.
12	改性的薄SOS膜CMOS器件辐射加固特性 Chinese Journal of Semiconductors , 2005, 26(7): 1406-1411.
13	预先老化对注F nMOS器件辐射可靠性的影响崔帅, 余学峰, 任迪远, 张华林, 艾尔肯, et al. Chinese Journal of Semiconductors , 2005, 26(1): 111-114.
14	Measurements of Optical Characterization for CMOS Song Min, Zheng Yaru, Lu Yongjun, Qu Yanling, Song Limin, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2407-2410.
15	CMOS器件的等时、等温退火效应 Chinese Journal of Semiconductors , 2004, 25(3): 302-306.
16	施主型界面态引起深亚微米槽栅PMOS特性的退化 Chinese Journal of Semiconductors , 2004, 25(5): 562-567.
17	薄栅氧高压CMOS器件研制 Chinese Journal of Semiconductors , 2004, 25(5): 568-572.
18	亚0.1μm栅长CMOS器件和电路的研制 Chinese Journal of Semiconductors , 2004, 25(5): 583-588.
19	凹槽深度与槽栅PMOSFET特性 Chinese Journal of Semiconductors , 2001, 22(5): 622-628.
20	0.5μm SOI CMOS器件和电路 Chinese Journal of Semiconductors , 2001, 22(5): 660-663.