Measurements of Carrier Confinement at β-FeSi<sub>2</sub>-Si Heterojunction by Electroluminescence

Li Cheng; T. Suemas; F. Hasegawa

Chin. J. Semicond. > 2005, Volume 26 > Issue 2 > 230-233

CONTENTS

Measurements of Carrier Confinement at β-FeSi₂-Si Heterojunction by Electroluminescence

+ Author Affiliations

Corresponding author: Department of Physics, Xiamen University, Xiamen 361005, China; Institute of Applied Physics, University of Tsukuba, Ibaraki 30527583, Japan; Institute of Applied Physics, University of Tsukuba, Ibaraki 30527583, Japan

Abstract: A Si p-π-n diode with β-FeSi2 particles embedded in the unintentionally doped Si (p-type) was designed for determining the band offset at β-FeSi2-Si heterojunction. When the diode is under forward bias,the electrons injected via the Si np－ junction diffuse to and are confined in the β-FeSi2 particles due to the band offset. The storage charge at theβ-FeSi2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p-Si near the Si junction, which prevents them from nonradiative recombination channels. This results in electroluminescence (EL) intensity from both Si and β-FeSi2 quenching slowly up to room temperature. The temperature dependent ratio of EL intensity of β-FeSi2 to Si indicates the loss of electron confinement following thermal excitation model. The conduction band offset between Si and β-FeSi2 is determined to be about 0.2eV.

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Received: 19 August 2015 Revised: Online: Published: 01 February 2005

A Si p-π-n diode with β-FeSi2 particles embedded in the unintentionally doped Si (p-type) was designed for determining the band offset at β-FeSi2-Si heterojunction. When the diode is under forward bias,the electrons injected via the Si np－ junction diffuse to and are confined in the β-FeSi2 particles due to the band offset. The storage charge at theβ-FeSi2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p-Si near the Si junction, which prevents them from nonradiative recombination channels. This results in electroluminescence (EL) intensity from both Si and β-FeSi2 quenching slowly up to room temperature. The temperature dependent ratio of EL intensity of β-FeSi2 to Si indicates the loss of electron confinement following thermal excitation model. The conduction band offset between Si and β-FeSi2 is determined to be about 0.2eV.

Measurements of Carrier Confinement at β-FeSi₂-Si Heterojunction by Electroluminescence

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Measurements of Carrier Confinement at β-FeSi₂-Si Heterojunction by Electroluminescence

Measurements of Carrier Confinement at β-FeSi₂-Si Heterojunction by Electroluminescence