CONTENTS
Abstract: H-gate and closed-gate PD SOI nMOSFETs are fabricated on SIMOX substrate,and the influence of floating body effect on the radiation hardness is studied.All the subthreshold characteristics of the devices do not change much after radiation of the total dose of 1e6rad(Si).The back gate threshold voltage shift of closed-gate is about 33% less than that of Hgate device.The reason should be that the body potential of the closed-gate device is raised due to impact ionization,and an electric field is produced across the BOX.The floating body effect can improve the radiation hardness of the back gate transistor.
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Received: 19 August 2015 Revised: Online: Published: 01 February 2005
| Citation: |
Zhao Hongchen, Hai Chaohe, Han Zhengsheng，and Qian He. Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs[J]. Journal of Semiconductors, 2005, 26(2): 234-237.
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Influence of Floating Body Effect on Radiation Hardness of PD SOI nMOSFETs[J]. Chin. J. Semicond., 2005, 26(2): 234.
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