High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs

Zhang Guoyu; Xiu Xiangqian; Zhang Rong; Tao Zhikuo; Cui Xugao; Zhang Jiachen; Xie Zili; Xu Xiaonong; Zheng Youdou

Article Navigation > Journal of Semiconductors > 2008 > 29(6): 1156-1159

Zhang Guoyu, Xiu Xiangqian, Zhang Rong, Tao Zhikuo, Cui Xugao, Zhang Jiachen, Xie Zili, Xu Xiaonong, Zheng Youdou. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. Journal of Semiconductors, 2008, 29(6): 1156-1159. ****Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.

Citation:

Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.

Citation:

Zhang G Y, Xiu X Q, Zhang R, Tao Z K, Cui X G, Zhang J C, Xie Z L, Xu X N, Zheng Y D. High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs[J]. J. Semicond., 2008, 29(6): 1156.

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High-Pressure and Temperature Synthesized Co-Doped ZnO Based DMSs

Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China
Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

Received Date: 2015-08-18
Accepted Date: 2007-10-19
Revised Date: 2008-01-11
Published Date: 2008-06-05

Abstract

Abstract

High-pressure and high-temperature are used to treat a series of Co doped ZnO samples synthesized by Sol-gel method.Structure and composition analyses suggest that CoO is formed after increasing the Co concentration under the high-pressure condition.The results of magnetism measurements by SQUID show that all the samples have room-temperature ferromagnetism and the ferromagnetism increases as the Co doping concentration increases,despite the formation of antiferromagnetic CoO under the high pressure condition.Thus,we argue that the ferromagnetism of ZnCoO is intrinsic.
- high-pressure,
- high-temperature,
- ZnO DMS

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