| Citation: |
Guo Xuejun, Lu Jingxiao, Wen Shutang, Yang Gen, Chen Yongsheng, Zhang Qingfeng, Gu Jinhua. Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD[J]. Journal of Semiconductors, 2008, 29(6): 1160-1163.
****
Guo X J, Lu J X, Wen S T, Yang G, Chen Y S, Zhang Q F, Gu J H. Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD[J]. J. Semicond., 2008, 29(6): 1160.
|
Effect of Power Density on the Properties of μc-Si:H Deposited by VHF-PECVD
-
Abstract
μc-Si:H films were deposited under different power density by VHF-PECVD.The microstructure of the films was investigated.The effect of power density on the deposition rate and crystallization of μc-Si:H was studied extensively.This study shows that as the power density increased,the deposition rate first increased gradually and then saturated.The thickness of the incubation layer and the nucleation density varied with power density.-
Keywords:
- μc-Si: H,
- VHF-PECVD,
- power density,
- incubation layer,
- nucleation density
-
References
-
Proportional views
DownLoad: