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Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD
Bo Liu, Jiayun Yin, Yuanjie Lü, Shaobo Dun, Xiongwen Zhang, et al.
Journal of Semiconductors, 2014, 35(11): 113005. doi: 10.1088/1674-4926/35/11/113005
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2 |
Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells
Xinliang Chen, Congbo Yan, Xinhua Geng, Dekun Zhang, Changchun Wei, et al.
Journal of Semiconductors, 2014, 35(4): 043002. doi: 10.1088/1674-4926/35/4/043002
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3 |
A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating
Zhiming Li, Hailing Li, Xiaobing Gan, Haiying Jiang, Jinping Li, et al.
Journal of Semiconductors, 2014, 35(9): 092003. doi: 10.1088/1674-4926/35/9/092003
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4 |
Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating
Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al.
Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004
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5 |
Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy
Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, et al.
Journal of Semiconductors, 2008, 29(6): 1177-1179.
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6 |
Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD
Zhou Jing, Ren Xiaomin, Huang Yongqing, Wang Qi
Journal of Semiconductors, 2008, 29(10): 1855-1859.
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7 |
Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN
Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, et al.
Journal of Semiconductors, 2008, 29(8): 1475-1478.
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8 |
Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets
Liu Yong, Nie Yuhong, Yao Shouguang
Chinese Journal of Semiconductors , 2007, 28(6): 913-917.
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9 |
Growth of High AI Content AIGaN Epilayer by MOCVD
Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 193-196.
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10 |
Growth and Characterization of m Plane GaN Material by MOCVD
Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 249-252.
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11 |
Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition
Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, et al.
Chinese Journal of Semiconductors , 2007, 28(10): 1568-1573.
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12 |
Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets
Nie Yuhong, Liu Yong, Yao Shouguang
Chinese Journal of Semiconductors , 2007, 28(1): 127-130.
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13 |
MOCVD Growth of InN Films on Sapphire Substrates
Xiao Hongling, Wang Xiaoliang, Yang Cuibai, Hu Guoxin, Ran Junxue, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 260-262.
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14 |
Simulation of the ZnO-MOCVD Horizontal Reactor Geometry
Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 309-311.
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15 |
Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD
Gao Lihua, Yang Yunke, Chen Haixin, Fu Song
Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.
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16 |
Growth and Optical Properties of ZnO Films and Quantum Wells
Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al.
Chinese Journal of Semiconductors , 2006, 27(4): 613-622.
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17 |
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al.
Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.
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18 |
Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD
Liang Song, Zhu Hongliang, Pan Jiaoqing, Wang Wei
Chinese Journal of Semiconductors , 2005, 26(11): 2074-2079.
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19 |
ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells
Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, et al.
Chinese Journal of Semiconductors , 2005, 26(12): 2363-2368.
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20 |
High Resistivity GaN Film Grown by MOCVD
Fang Cebao, Wang Xiaoliang, Liu Chao, Hu Guoxin, Wang Junxi, et al.
Chinese Journal of Semiconductors , 2005, 26(S1): 91-93.
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