Chin. J. Semicond. > 1984, Volume 5 > Issue 6 > 661-665
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CVD法淀积Al_2O_3膜及其与InP、Si的界面性质

袁仁宽 and 徐俊明

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(6): 661-665
      袁仁宽, 徐俊明. CVD法淀积Al_2O_3膜及其与InP、Si的界面性质[J]. 半导体学报(英文版), 1984, 5(6): 661-665.
      Citation:
      袁仁宽, 徐俊明. CVD法淀积Al_2O_3膜及其与InP、Si的界面性质[J]. 半导体学报(英文版), 1984, 5(6): 661-665.
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      • Received Date: 2015-08-20

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