Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 226-228
|

Fundamental technique of direct writing Electron beam Nano-Lithography

Liu Ming, Chen Baogin, Wang Yunxiang, Long Shibing, Lu Jing and Li Ling

+ Author Affiliations

PDF

Abstract: Electron beam lithography (EBL) is a specialized technique for creating the extremely fine patterns by the modern electronics industry for integrated circuits. In this research, the main attention is focused on the technology of positive resistPMMA and chemically amplified negative resist-SAL6O1. The nano-level patterns are exposed by the above resists. E-beam/optical mix and match lithography is employed to improve the efficiency ofe-beam lithography. Both resize the pattern and dose modulation are devised to minimize the proximity effect.

Key words: electron beam lithography,  mix and match technology,  proximity effect correction

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2019 Times PDF downloads: 591 Times Cited by: 0 Times

    History

    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 226-228
      Liu Ming, Chen Baogin, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Journal of Semiconductors, 2003, 24(S1): 226-228. ****Liu M, C B, Wang Y X, Long S B, Lu J, Li L. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Chin. J. Semicond., 2003, 24(S1): 226.
      Citation:
      Liu Ming, Chen Baogin, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Journal of Semiconductors, 2003, 24(S1): 226-228. ****
      Liu M, C B, Wang Y X, Long S B, Lu J, Li L. Fundamental technique of direct writing Electron beam Nano-Lithography[J]. Chin. J. Semicond., 2003, 24(S1): 226.
      shu

      Fundamental technique of direct writing Electron beam Nano-Lithography

      • R&D Center of Microelectlonics, The Chinese Academy of Sciences, Beijing 100029, China,R&D Center of Microelectlonics, The Chinese Academy of Sciences, Beijing 100029, China,R&D Center of Microelectlonics, The Chinese Academy of Sciences, Beijing 100029, China,R&D Center of Microelectlonics, The Chinese Academy of Sciences, Beijing 100029, China,R&D Center of Microelectlonics, The Chinese Academy of Sciences, Beijing 100029, China and R&D Center of Microelectlonics, The Chinese Academy of Sciences, Beijing 100029, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return