Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 221-225

Proximity Effect Correction Technique in Electron-Beam Direct Writing

Chen Baogin, Ren Liming, Liu Ming, Wang Yunxiang, Long Shibing, Lu Jing and Li Ling

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Abstract: The electron scattering processes are simulated by Monte Carlo method. The production mechanism of proximity effect and effective approaches of proximity effect correction are inVestigated. The experimental results show that proximity effect is a comprehensive phenomenon. It can be reduced and expectant purpose of proximity effect correction can be achieved through optimizing processes.

Key words: nanometer features

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Chen Baogin, Ren Liming, Liu Ming, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Proximity Effect Correction Technique in Electron-Beam Direct Writing[J]. Journal of Semiconductors, 2003, 24(S1): 221-225. ****Chen B, Ren L M, Liu M, Wang Y X, Long S B, Lu J, Li L. Proximity Effect Correction Technique in Electron-Beam Direct Writing[J]. Chin. J. Semicond., 2003, 24(S1): 221.
      Citation:
      Chen Baogin, Ren Liming, Liu Ming, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Proximity Effect Correction Technique in Electron-Beam Direct Writing[J]. Journal of Semiconductors, 2003, 24(S1): 221-225. ****
      Chen B, Ren L M, Liu M, Wang Y X, Long S B, Lu J, Li L. Proximity Effect Correction Technique in Electron-Beam Direct Writing[J]. Chin. J. Semicond., 2003, 24(S1): 221.

      Proximity Effect Correction Technique in Electron-Beam Direct Writing

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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