| Citation: |
Xue Chunlai, Cheng Buwen, Yao Fei, Wang Qiming. Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Journal of Semiconductors, 2006, 27(1): 9-13.
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Xue C L, Cheng B W, Yao F, Wang Q M. Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Chin. J. Semicond., 2006, 27(1): 9.
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Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
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Abstract
A multi-finger structure power SiGe HBT device (with an emitter area of about 166μm2) is fabricated with very simple 2μm double-mesa technology.The DC current gain β is 14425.The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1×1017cm-3 and a collector thickness of 400nm.Though our data are influenced by large additional RF probe pads,the device exhibits a maximum oscillation frequency fmax of 101GHz and a cut-off frequency fT of 18GHz at a DC bias point of IC=10mA and VCE=25V. -
References
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Proportional views
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