Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 168-172
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GaAs/Si/AlAs异质结的带阶和GaAs生长温度的影响

李永平 , 澜清 , 吴正龙 , 周大勇 , 孔云川 , 牛智川 , 田强 , 杨锡震 and 王亚非

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Key words: GaAs/AlAs异质结, Si夹层, XPS测量, C-V测量, DLTS测量, 带阶调节

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 168-172
      李永平, 澜清, 吴正龙, 周大勇, 孔云川, 牛智川, 田强, 杨锡震, 王亚非. GaAs/Si/AlAs异质结的带阶和GaAs生长温度的影响[J]. 半导体学报(英文版), 2003, 24(2): 168-172.
      Citation:
      李永平, 澜清, 吴正龙, 周大勇, 孔云川, 牛智川, 田强, 杨锡震, 王亚非. GaAs/Si/AlAs异质结的带阶和GaAs生长温度的影响[J]. 半导体学报(英文版), 2003, 24(2): 168-172.
      shu

      • Received Date: 2015-08-20

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