Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 173-176
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氧化铝模板法制备Ge纳米线

叶好华 , 叶志镇 , 黄靖云 , 吴贵斌 , 赵炳辉 , 涂江平 and 侯山昆

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Key words: Ge纳米线, 氧化铝模板, 低压化学气相沉积, 气-液-固(VLS)生长机理

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 173-176
      叶好华, 叶志镇, 黄靖云, 吴贵斌, 赵炳辉, 涂江平, 侯山昆. 氧化铝模板法制备Ge纳米线[J]. 半导体学报(英文版), 2003, 24(2): 173-176.
      Citation:
      叶好华, 叶志镇, 黄靖云, 吴贵斌, 赵炳辉, 涂江平, 侯山昆. 氧化铝模板法制备Ge纳米线[J]. 半导体学报(英文版), 2003, 24(2): 173-176.
      shu

      • Received Date: 2015-08-20

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