Chin. J. Semicond. > 1991, Volume 12 > Issue 4 > 211-217
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Monte Carlo法模拟亚微米GaAs MESFET直流特性

赵鸿麟 , 李斌桥 and 陈弘达

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(4): 211-217
      赵鸿麟, 李斌桥, 陈弘达. Monte Carlo法模拟亚微米GaAs MESFET直流特性[J]. 半导体学报(英文版), 1991, 12(4): 211-217.
      Citation:
      赵鸿麟, 李斌桥, 陈弘达. Monte Carlo法模拟亚微米GaAs MESFET直流特性[J]. 半导体学报(英文版), 1991, 12(4): 211-217.
      shu

      • Received Date: 2015-08-19

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