Chin. J. Semicond. > 1991, Volume 12 > Issue 4 > 218-223
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含氮CZ-Si中N-N对的退火行为

祁明维 , 谭淞生 , 朱斌 , 蔡培新 , 顾为芳 , 许学敏 , 施天生 , 阙端麟 and 李立本

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(4): 218-223
      祁明维, 谭淞生, 朱斌, 蔡培新, 顾为芳, 许学敏, 施天生, 阙端麟, 李立本. 含氮CZ-Si中N-N对的退火行为[J]. 半导体学报(英文版), 1991, 12(4): 218-223.
      Citation:
      祁明维, 谭淞生, 朱斌, 蔡培新, 顾为芳, 许学敏, 施天生, 阙端麟, 李立本. 含氮CZ-Si中N-N对的退火行为[J]. 半导体学报(英文版), 1991, 12(4): 218-223.
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      • Received Date: 2015-08-19

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