Chin. J. Semicond. > 1994, Volume 15 > Issue 4 > 264-267
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热壁MOCVD Hg1－xCdxTe中的Hg蒸汽压和分配比

丁永庆，彭瑞伍，韦光宇，陈记安，李贤春，张玉平，刘克岳，赵振香

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(4): 264-267
      丁永庆，彭瑞伍，韦光宇，陈记安，李贤春，张玉平，刘克岳，赵振香. 热壁MOCVD Hg1－xCdxTe中的Hg蒸汽压和分配比[J]. 半导体学报(英文版), 1994, 15(4): 264-267.
      Citation:
      丁永庆，彭瑞伍，韦光宇，陈记安，李贤春，张玉平，刘克岳，赵振香. 热壁MOCVD Hg1－xCdxTe中的Hg蒸汽压和分配比[J]. 半导体学报(英文版), 1994, 15(4): 264-267.
      shu

      • Received Date: 2015-08-18

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