| Citation: |
Sang Shengbo, Xue Chenyang, Zhang Wendong, Xiong Jijun, Ruan Yong, Zhang Dacheng, Hao Yilong. Raman Online Measurement of Stress Resulting from Micromachining[J]. Journal of Semiconductors, 2006, 27(6): 1141-1146.
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Sang S B, Xue C Y, Zhang W D, Xiong J J, Ruan Y, Zhang D C, Hao Y L. Raman Online Measurement of Stress Resulting from Micromachining[J]. Chin. J. Semicond., 2006, 27(6): 1141.
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Raman Online Measurement of Stress Resulting from Micromachining
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Abstract
Micromachining can result in residual stress in a wafer.This paper puts forward an online measuring method for measuring the stress in silicon samples prepared with three common micromachining processes:deposition,etching,and bonding.The experimental results support the theory.In deposition processes,the residual stress resulting from Si3N4,which is tensile stress,is larger than SiO2,which is compressive stress.The tensile stress resulting from etching and bonding processes is relatively larger with a maximum value over 300MPa.-
Keywords:
- micromachining,
- residual stress,
- Raman,
- online-measurement
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References
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Proportional views
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