Chin. J. Semicond. > 1985, Volume 6 > Issue 3 > 281-288
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GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴

郑一阳

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(3): 281-288
      郑一阳. GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴[J]. 半导体学报(英文版), 1985, 6(3): 281-288.
      Citation:
      郑一阳. GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴[J]. 半导体学报(英文版), 1985, 6(3): 281-288.
      shu

      • Received Date: 2015-08-20

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