Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1441-1446
|

PAPERS

Optimization Design for Trench Drift Region Structure in RF Power LDMOS

Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo and Li Zhaoji

+ Author Affiliations

PDF

Abstract: A RF power LDMOS with a trench drift region is optimally designed. Rectangular,converse triangular,and triangular trench structures are proposed based on its frequency characteristic,and the position the depth,and the width of the trench are analyzed.Under the same condition of breakdown voltage and on-resistance,the optimized trench structure is triangular,which can decrease the feedback capacitance by 24% and increase the cut-off frequency by 15%.

Key words: RF power LDMOS, trench structure, parasitic feedback capacitance, cut-off frequency

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3524 Times PDF downloads: 2914 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 August 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2006  >  27(8): 1441-1446
      Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo, Li Zhaoji. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Journal of Semiconductors, 2006, 27(8): 1441-1446. ****Wang Y M, Li Z H, Wang X S, Zhai X K, Zhang B, Li Z J. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Chin. J. Semicond., 2006, 27(8): 1441.
      Citation:
      Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo, Li Zhaoji. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Journal of Semiconductors, 2006, 27(8): 1441-1446. ****
      Wang Y M, Li Z H, Wang X S, Zhai X K, Zhang B, Li Z J. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Chin. J. Semicond., 2006, 27(8): 1441.
      shu

      Optimization Design for Trench Drift Region Structure in RF Power LDMOS

      • College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610054,China

      • College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610055,China

      • College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610056,China

      • College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610057,China

      • College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610058,China

      • College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610059,China

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return