Chin. J. Semicond. > 2000, Volume 21 > Issue 1 > 89-92
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用调制光谱研究半导体体材料及微结构的非线性极化率

王若桢 , 田强 and 江德生

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Key words: 极化率, 半导体微结构, 调制光谱

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(1): 89-92
      王若桢, 田强, 江德生. 用调制光谱研究半导体体材料及微结构的非线性极化率[J]. 半导体学报(英文版), 2000, 21(1): 89-92.
      Citation:
      王若桢, 田强, 江德生. 用调制光谱研究半导体体材料及微结构的非线性极化率[J]. 半导体学报(英文版), 2000, 21(1): 89-92.
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      • Received Date: 2015-08-20

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