Chin. J. Semicond. > 1998, Volume 19 > Issue 3 > 218-220
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CONTENTS

低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长

陈博 , 王圩 , 汪孝杰 , 张静媛 , 朱洪亮 , 周帆 , 王玉田 , 马朝华 , 张子莹 and 刘国利

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(3): 218-220
      陈博, 王圩, 汪孝杰, 张静媛, 朱洪亮, 周帆, 王玉田, 马朝华, 张子莹, 刘国利. 低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长[J]. 半导体学报(英文版), 1998, 19(3): 218-220.
      Citation:
      陈博, 王圩, 汪孝杰, 张静媛, 朱洪亮, 周帆, 王玉田, 马朝华, 张子莹, 刘国利. 低阈值1.3μmInGaAsP/InP应变补偿多量子阱DFB激光器LP┐MOCVD生长[J]. 半导体学报(英文版), 1998, 19(3): 218-220.
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      • Received Date: 2015-08-20

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