Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 726-729
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GaN生长速率的研究

金瑞琴 , 赵德刚 , 刘建平 , 张纪才 and 杨辉

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Key words: MOCVD, GaN, 在位监控, 生长速率

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 726-729
      金瑞琴, 赵德刚, 刘建平, 张纪才, 杨辉. GaN生长速率的研究[J]. 半导体学报(英文版), 2005, 26(4): 726-729.
      Citation:
      金瑞琴, 赵德刚, 刘建平, 张纪才, 杨辉. GaN生长速率的研究[J]. 半导体学报(英文版), 2005, 26(4): 726-729.
      shu

      • Received Date: 2015-08-19

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