Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 726-729
|

CONTENTS

GaN生长速率的研究

金瑞琴 , 赵德刚 , 刘建平 , 张纪才 and 杨辉

+ Author Affiliations

PDF

Key words: MOCVD, GaN, 在位监控, 生长速率

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2324 Times PDF downloads: 1803 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 726-729
      金瑞琴, 赵德刚, 刘建平, 张纪才, 杨辉. GaN生长速率的研究[J]. 半导体学报(英文版), 2005, 26(4): 726-729.
      Citation:
      金瑞琴, 赵德刚, 刘建平, 张纪才, 杨辉. GaN生长速率的研究[J]. 半导体学报(英文版), 2005, 26(4): 726-729.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return