| Citation: |
Gao Jinxia, Zhang Yimen, Zhang Yuming. C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC[J]. Journal of Semiconductors, 2006, 27(7): 1259-1263.
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Gao J X, Zhang Y M, Zhang Y M. C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC[J]. Chin. J. Semicond., 2006, 27(7): 1259.
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C-V Characteristic Distortion in the Pinch-Off Mode of a Buried Channel MOS Structure in 4H-SiC
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Abstract
The distortion of the C-V characteristics of a SiC buried-channel MOS structure is presented.It is difficult to characterize the gate capacitance because there is a pn junction in buried-channel MOSFETs.The surface depletion region and n-side space-charge region merge when the channel is punched through.In this case,the total surface capacitance is the sum of the surface depletion region capacitance and the pn junction capacitance,and the C-V characteristics are distorted.The analytic expression of gate capacitance in the pinch-off mode is obtained by solving Poisson’s equation.The C-V characteristics in the pinch-off mode are analyzed on a fundamental physical level.The gate capacitance calculated with the model agrees well with experimental results. -
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