| Citation: |
Zhang Zhiguo, Yang Ruixia, Li Li, Feng Zhen, Wang Yong, Yang Kewu. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Journal of Semiconductors, 2006, 27(7): 1255-1258.
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Zhang Z G, Yang R X, Li L, Feng Z, Wang Y, Yang K W. Output Power of an AlGaN/GaN HFET on Sapphire Substrate[J]. Chin. J. Semicond., 2006, 27(7): 1255.
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Output Power of an AlGaN/GaN HFET on Sapphire Substrate
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Abstract
The low breakdown voltage of AlGaN/GaN HFETs,which is caused by the poor buffer layer of GaN epitaxial wafer,is improved through mesa isolation and implantation isolation.Annealing at 500℃ for 50s after the gate metal deposition yields the best performance for an Ni-AlGaN/GaN diode.In particular,the ideality factor and barrier height reach 1.5 and 0.87eV,respectively.Optimization is achieved by comparing the performance of the gate and output power of AlGaN/GaN HFETs fabricated under different conditions.The output power of a 1mm-gate-wide AlGaN/GaN HFET on sapphire substrate is 4.57W, with a power added efficiency of 55.1% at 8GHz.-
Keywords:
- AlGaN/GaN,
- HFET,
- isolation,
- rectified performance,
- annealing,
- output power
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References
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Proportional views
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