| Citation: |
Tao Chunmin, Tao Yaqi, Chen Cheng, Kong Yuechan, Chen Dunjun, Shen Bo, 焦刚, Jiao Gang, Chen Tangsheng, Zhang Rong. High-Temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures[J]. Journal of Semiconductors, 2006, 27(7): 1251-1254.
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Tao C M, Tao Y Q, Chen C, Kong Y C, Chen D J, Shen B, Jiao G, Chen T S, Zhang R. High-Temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures[J]. Chin. J. Semicond., 2006, 27(7): 1251.
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High-Temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures
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Abstract
The transport properties of the two-dimensional electron gas (2DEG) in fully strained and a partially strain-relaxed Al0.22Ga0.78N/GaN heterostructures at temperatures ranging from 300 to 680K are investigated with Hall measurements.The results indicate that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures.The calculated results also show that the 2DEG distribution gradually expands to the inside of the AlGaN and GaN layers with increasing temperature due to the electron transfer to the higher order subbands. Hence, the effect of screening on LO phonon scattering is weakened and the alloy scattering of the AlGaN layer on the 2DEG becomes stronger.-
Keywords:
- AlGaN/GaN heterostructure,
- 2DEG,
- high-temperature transport
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References
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Proportional views
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