| Citation: |
Li Juan, Zhang Xiaodan, Liu Jianping, Zhao Shuyun, Wu Chunya, Meng Zhiguo, Zhang Fang, Xiong Shaozhen. Study of Bottom-Gate μc-Si TFTs[J]. Journal of Semiconductors, 2006, 27(7): 1246-1250.
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Li J, Zhang X D, Liu J P, Zhao S Y, Wu C Y, Meng Z G, Zhang F, Xiong S Z. Study of Bottom-Gate μc-Si TFTs[J]. Chin. J. Semicond., 2006, 27(7): 1246.
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Study of Bottom-Gate μc-Si TFTs
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Abstract
The incubation layer is the key factor in the growth of microcrystalline silicon (μc-Si) film used as the active layer of μc-Si TFT,which is confirmed by experimental results in detail.We find that decreasing the silicon concentration (Sc) is one effective way to thin the incubation layer.We also find that SiNx,used as the gate-insulator-layer of the bottom gate TFT,can increase (by about 20%) the crystalline volume factor (Xc) of μc-Si thin film deposited thereon.Therefore,while depositing μc-Si on SiNx to fabricate the bottom gate TFT,this effect must be taken into account.As a result,to obtain excellent performance from a bottom-gate μc-Si TFT,the appropriate Sc for the active-layer must be no less than 3%.According to the relation between the Xc of μc-Si film and its deposition condition,it can be seen clearly that under the same deposition condition,the difference between the Xc value of μc-Si film deposited on glass and that on SiNx for the active layer in TFT is ～0%,which indicates the augmenting role of SiNx in the crystalline growth of μc-Si thin film. -
References
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