Abstract: Experimental results of bulk AlN crystal growth by physical vapor transport (PVT) and its characterization are presented.A growth temperature of 1900℃ is reached by RF coil heating of the AlN source material contained in a BN crucible.Thin needle crystals and dense polycrystals are obtained in this case.It is difficult to grow large AlN crystals using a BN crucible.A growth temperature of 2200℃ is reached by RF induction heating of the source material contained with a tungsten crucible.AlN crystals in a diameter of 22mm are grown on AlN ceramic plate and 6H-SiC wafer,respectively,of which the largest grain size is 10mm in length and 5mm in diameter.The structure and component of several AlN samples are analyzed using X-ray powder diffraction.The chemical thermodynamic process and growth phenomena related to the AlN PVT growth are discussed.

Key words: AlN, crystal, sublimation