Chin. J. Semicond. > 2001, Volume 22 > Issue 5 > 599-603
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低碳含量a-Si_(1-x)C_x∶H薄膜的化学键结构

王燕 , 岳瑞峰 , 韩和相 , 廖显伯 , 王永谦 , 刁宏伟 and 孔光临

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Key words: a-Si1-xCx∶H薄膜, Raman测量, 硅团簇

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    王燕, 岳瑞峰, 韩和相, 廖显伯, 王永谦, 刁宏伟, 孔光临. 低碳含量a-Si_(1-x)C_x∶H薄膜的化学键结构[J]. 半导体学报(英文版), 2001, 22(5): 599-603.
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    Received: 20 August 2015 Revised: Online: Published: 01 May 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(5): 599-603
      王燕, 岳瑞峰, 韩和相, 廖显伯, 王永谦, 刁宏伟, 孔光临. 低碳含量a-Si_(1-x)C_x∶H薄膜的化学键结构[J]. 半导体学报(英文版), 2001, 22(5): 599-603.
      Citation:
      王燕, 岳瑞峰, 韩和相, 廖显伯, 王永谦, 刁宏伟, 孔光临. 低碳含量a-Si_(1-x)C_x∶H薄膜的化学键结构[J]. 半导体学报(英文版), 2001, 22(5): 599-603.
      shu

      • Received Date: 2015-08-20

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