Chin. J. Semicond. > 1999, Volume 20 > Issue 5 > 389-394
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平面掺杂异质结场效应管的二维电子气浓度和材料结构尺寸之间的关系

李效白

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(5): 389-394
      李效白. 平面掺杂异质结场效应管的二维电子气浓度和材料结构尺寸之间的关系[J]. 半导体学报(英文版), 1999, 20(5): 389-394.
      Citation:
      李效白. 平面掺杂异质结场效应管的二维电子气浓度和材料结构尺寸之间的关系[J]. 半导体学报(英文版), 1999, 20(5): 389-394.
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      • Received Date: 2015-08-20

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