Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 881-884
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离子注入氮化薄SiO_2栅介质的特性

王延峰 and 刘忠立

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Key words: 氮化薄SiO2栅, 氮离子注入, 硼穿透, FN应力

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 881-884
      王延峰, 刘忠立. 离子注入氮化薄SiO_2栅介质的特性[J]. 半导体学报(英文版), 2001, 22(7): 881-884.
      Citation:
      王延峰, 刘忠立. 离子注入氮化薄SiO_2栅介质的特性[J]. 半导体学报(英文版), 2001, 22(7): 881-884.
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      • Received Date: 2015-08-20

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