Citation: |
王延峰, 刘忠立. 离子注入氮化薄SiO_2栅介质的特性[J]. 半导体学报(英文版), 2001, 22(7): 881-884.
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Proportional views
Key words: 氮化薄SiO2栅, 氮离子注入, 硼穿透, FN应力
Article views: 2273 Times PDF downloads: 1228 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 July 2001
Citation: |
王延峰, 刘忠立. 离子注入氮化薄SiO_2栅介质的特性[J]. 半导体学报(英文版), 2001, 22(7): 881-884.
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