Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 524-527
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电化学腐蚀法制备的SiO2包裹纳米硅颗粒结构的电致发光特性

严勇健, 吴雪梅 and 诸葛兰剑

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Abstract: 将采用传统电化学腐蚀法制备的多孔硅样品，用浸泡液浸泡剥离其表层多孔层，使样品表面形成SiO2包裹纳米硅颗粒的结构，在表面镀半透明Au膜后制备成电致发光器件．在正向偏压下样品可以长时间稳定地发出绿光（510nm），并且随着偏压的升高，发光强度增强，峰位不变．讨论了可能的发光机制．

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 524-527
      严勇健, 吴雪梅, 诸葛兰剑. 电化学腐蚀法制备的SiO2包裹纳米硅颗粒结构的电致发光特性[J]. Journal of Semiconductors, 2005, 26(3): 524-527. ****电化学腐蚀法制备的SiO2包裹纳米硅颗粒结构的电致发光特性[J]. Chin. J. Semicond., 2005, 26(3): 524.
      Citation:
      严勇健, 吴雪梅, 诸葛兰剑. 电化学腐蚀法制备的SiO2包裹纳米硅颗粒结构的电致发光特性[J]. Journal of Semiconductors, 2005, 26(3): 524-527. ****
      电化学腐蚀法制备的SiO2包裹纳米硅颗粒结构的电致发光特性[J]. Chin. J. Semicond., 2005, 26(3): 524.
      shu

      电化学腐蚀法制备的SiO2包裹纳米硅颗粒结构的电致发光特性

      • Received Date: 2015-08-19

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