Abstract: After the formation of pn junction,the surface layer of crystalline Si substrate can be amorphized by Si ion implant.The influence of the amorphization implant on nickel silicidation is studied in this paper.The experimental results show that the amorphization implant can enhance the Ni/Si reaction at low temperatures and NiSi can even directly form after low temperature annealing.It is also revealed that the amorphization implant will not induce extra dopant redistribution.However,the transmission electron microscopy demonstrates that the amorphization implant energy should be optimized.

Key words: silicide, NiSi, amorphization implant, solid-state reaction