Citation: |
Li Haisong, Sun Weifeng, Yi Yangbo, Shi Longxing. Modeling of High-Voltage LDMOS for PDP Driver ICs[J]. Journal of Semiconductors, 2008, 29(11): 2110-2114.
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Li H S, Sun W F, Yi Y B, Shi L X. Modeling of High-Voltage LDMOS for PDP Driver ICs[J]. J. Semicond., 2008, 29(11): 2110.
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Modeling of High-Voltage LDMOS for PDP Driver ICs
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Abstract
A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs.The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects,voltage-dependent drift resistance,self-heating effects,and Miller capacitance.In contrast to most physical or sub-circuit models,the proposed model not only provides precise simulated results,but also brings a very fast modeling procedure.Furthermore,the model also can be embedded in a commercial SPICE simulator easily.The simulation results using the presented models agree well with the measured ones and the error is less than 5%.-
Keywords:
- model,
- LDMOS,
- sub-circuit,
- PDP driver ICs
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References
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Proportional views