| Citation: |
Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, Zhang Hui, Wang Liang, Li Chengzhan, Pang Lei, Liu Xinyu, Liu Jian. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network[J]. Journal of Semiconductors, 2008, 29(8): 1445-1448.
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Zeng X, Chen X J, Liu G G, Yuan T T, Chen Z Z, Zhang H, Wang L, Li C Z, Pang L, Liu X Y, Liu J. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network[J]. J. Semicond., 2008, 29(8): 1445.
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An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network
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Abstract
8GHz 20W internally matched AlGaN/GaN HEMTs have been developed.The input and output matching networks are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm (20W) power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz.-
Keywords:
- AlGaN/GaN HEMTs,
- internally match,
- power combining,
- power amplifier
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References
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