Chin. J. Semicond. > 1999, Volume 20 > Issue 11 > 1044-1048

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铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀

刘秦 , 林殷茵 , 吴小清 , 张良莹 and 姚熹

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(11): 1044-1048
      刘秦, 林殷茵, 吴小清, 张良莹, 姚熹. 铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀[J]. 半导体学报(英文版), 1999, 20(11): 1044-1048.
      Citation:
      刘秦, 林殷茵, 吴小清, 张良莹, 姚熹. 铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀[J]. 半导体学报(英文版), 1999, 20(11): 1044-1048.
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      • Received Date: 2015-08-19

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