Journal of Semiconductors

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Volume 20, Issue 11, Nov 1999

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CONTENTS

温度引起的ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中势阱层和势垒层的反转

李国华, 朱作明, 刘南竹, 韩和相, 汪兆平, 王杰, 王迅

Chin. J. Semicond. 1999, 20(11): 945-951

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 945.

李国华, 朱作明, 刘南竹, 韩和相, 汪兆平, 王杰, 王迅. 温度引起的ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中势阱层和势垒层的反转[J]. Chin. J. Semicond., 1999, 20(11): 945..Export: BibTex EndNote

李国华, 朱作明, 刘南竹, 韩和相, 汪兆平, 王杰, 王迅. 温度引起的ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格中势阱层和势垒层的反转[J]. Chin. J. Semicond., 1999, 20(11): 945...

LICVD法制备a-Si_3N_4纳米粒子光谱研究

凤雷, 郑韬, 李道火

Chin. J. Semicond. 1999, 20(11): 952-956

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 952.

凤雷, 郑韬, 李道火. LICVD法制备a-Si_3N_4纳米粒子光谱研究[J]. Chin. J. Semicond., 1999, 20(11): 952..Export: BibTex EndNote

凤雷, 郑韬, 李道火. LICVD法制备a-Si_3N_4纳米粒子光谱研究[J]. Chin. J. Semicond., 1999, 20(11): 952...

质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响

黄万霞, 林理彬, 曾一平, 潘量

Chin. J. Semicond. 1999, 20(11): 957-962

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 957.

黄万霞, 林理彬, 曾一平, 潘量. 质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响[J]. Chin. J. Semicond., 1999, 20(11): 957..Export: BibTex EndNote

黄万霞, 林理彬, 曾一平, 潘量. 质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响[J]. Chin. J. Semicond., 1999, 20(11): 957...

垂直腔面发射半导体激光器的电、热和光波导特性

赵一广, 张宇生, 黄显玲

Chin. J. Semicond. 1999, 20(11): 963-970

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 963.

赵一广, 张宇生, 黄显玲. 垂直腔面发射半导体激光器的电、热和光波导特性[J]. Chin. J. Semicond., 1999, 20(11): 963..Export: BibTex EndNote

赵一广, 张宇生, 黄显玲. 垂直腔面发射半导体激光器的电、热和光波导特性[J]. Chin. J. Semicond., 1999, 20(11): 963...

电子束蒸镀Y_2O_3-ZrO_2减反射膜用于1.3μm半导体激光器

王浙辉, 林理彬, 卢铁城

Chin. J. Semicond. 1999, 20(11): 971-976

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 971.

王浙辉, 林理彬, 卢铁城. 电子束蒸镀Y_2O_3-ZrO_2减反射膜用于1.3μm半导体激光器[J]. Chin. J. Semicond., 1999, 20(11): 971..Export: BibTex EndNote

王浙辉, 林理彬, 卢铁城. 电子束蒸镀Y_2O_3-ZrO_2减反射膜用于1.3μm半导体激光器[J]. Chin. J. Semicond., 1999, 20(11): 971...

VDMOS均匀掺杂外延区的优化设计

何进, 王新, 陈星弼

Chin. J. Semicond. 1999, 20(11): 977-982

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 977.

何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. Chin. J. Semicond., 1999, 20(11): 977..Export: BibTex EndNote

何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. Chin. J. Semicond., 1999, 20(11): 977...

CdTe单晶的红外消光特性

杨柏梁, 石川幸雄, 一色实

Chin. J. Semicond. 1999, 20(11): 983-988

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 983.

杨柏梁, 石川幸雄, 一色实. CdTe单晶的红外消光特性[J]. Chin. J. Semicond., 1999, 20(11): 983..Export: BibTex EndNote

杨柏梁, 石川幸雄, 一色实. CdTe单晶的红外消光特性[J]. Chin. J. Semicond., 1999, 20(11): 983...

界面态对AlGaAs/GaAs HEMT直流输出特性的影响

张兴宏, 程知群, 夏冠群, 徐元森, 杨玉芬, 王占国

Chin. J. Semicond. 1999, 20(11): 989-993

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 989.

张兴宏, 程知群, 夏冠群, 徐元森, 杨玉芬, 王占国. 界面态对AlGaAs/GaAs HEMT直流输出特性的影响[J]. Chin. J. Semicond., 1999, 20(11): 989..Export: BibTex EndNote

张兴宏, 程知群, 夏冠群, 徐元森, 杨玉芬, 王占国. 界面态对AlGaAs/GaAs HEMT直流输出特性的影响[J]. Chin. J. Semicond., 1999, 20(11): 989...

GaAs双栅MESFET的PSPICE直流模型

程知群, 孙晓玮, 夏冠群

Chin. J. Semicond. 1999, 20(11): 994-998

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 994.

程知群, 孙晓玮, 夏冠群. GaAs双栅MESFET的PSPICE直流模型[J]. Chin. J. Semicond., 1999, 20(11): 994..Export: BibTex EndNote

程知群, 孙晓玮, 夏冠群. GaAs双栅MESFET的PSPICE直流模型[J]. Chin. J. Semicond., 1999, 20(11): 994...

SI-GaAs材料的电学补偿

赖占平, 齐德格, 高瑞良, 杜庚娜, 刘晏凤, 刘建宁

Chin. J. Semicond. 1999, 20(11): 999-1003

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 999.

赖占平, 齐德格, 高瑞良, 杜庚娜, 刘晏凤, 刘建宁. SI-GaAs材料的电学补偿[J]. Chin. J. Semicond., 1999, 20(11): 999..Export: BibTex EndNote

赖占平, 齐德格, 高瑞良, 杜庚娜, 刘晏凤, 刘建宁. SI-GaAs材料的电学补偿[J]. Chin. J. Semicond., 1999, 20(11): 999...

用Franz-Keldysh效应研究GaAs表面硫化学钝化

廖友贵, 金鹏, 李乙钢, 张存洲, 潘士宏, 梁基本

Chin. J. Semicond. 1999, 20(11): 1004-1009

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1004.

廖友贵, 金鹏, 李乙钢, 张存洲, 潘士宏, 梁基本. 用Franz-Keldysh效应研究GaAs表面硫化学钝化[J]. Chin. J. Semicond., 1999, 20(11): 1004..Export: BibTex EndNote

廖友贵, 金鹏, 李乙钢, 张存洲, 潘士宏, 梁基本. 用Franz-Keldysh效应研究GaAs表面硫化学钝化[J]. Chin. J. Semicond., 1999, 20(11): 1004...

图形衬底上硅区双离子束选择淀积Co研究

吴正龙, 姚振钰, 刘志凯, 张建辉, 秦复光, 林兰英

Chin. J. Semicond. 1999, 20(11): 1010-1014

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1010.

吴正龙, 姚振钰, 刘志凯, 张建辉, 秦复光, 林兰英. 图形衬底上硅区双离子束选择淀积Co研究[J]. Chin. J. Semicond., 1999, 20(11): 1010..Export: BibTex EndNote

吴正龙, 姚振钰, 刘志凯, 张建辉, 秦复光, 林兰英. 图形衬底上硅区双离子束选择淀积Co研究[J]. Chin. J. Semicond., 1999, 20(11): 1010...

硅锥阴极中电子输运的数值模拟

皇甫鲁江, 朱长纯

Chin. J. Semicond. 1999, 20(11): 1015-1021

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1015.

皇甫鲁江, 朱长纯. 硅锥阴极中电子输运的数值模拟[J]. Chin. J. Semicond., 1999, 20(11): 1015..Export: BibTex EndNote

皇甫鲁江, 朱长纯. 硅锥阴极中电子输运的数值模拟[J]. Chin. J. Semicond., 1999, 20(11): 1015...

掺铂TiO_(2-x)氧敏薄膜的制备和性能

郑嘹赢, 徐明霞, 徐廷献

Chin. J. Semicond. 1999, 20(11): 1022-1025

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1022.

郑嘹赢, 徐明霞, 徐廷献. 掺铂TiO_(2-x)氧敏薄膜的制备和性能[J]. Chin. J. Semicond., 1999, 20(11): 1022..Export: BibTex EndNote

郑嘹赢, 徐明霞, 徐廷献. 掺铂TiO_(2-x)氧敏薄膜的制备和性能[J]. Chin. J. Semicond., 1999, 20(11): 1022...

Quasi-Thermodynamic

陆大成, 段树坤

Chin. J. Semicond. 1999, 20(11): 1026-1033

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1026.

陆大成, 段树坤. Quasi-Thermodynamic[J]. Chin. J. Semicond., 1999, 20(11): 1026..Export: BibTex EndNote

陆大成, 段树坤. Quasi-Thermodynamic[J]. Chin. J. Semicond., 1999, 20(11): 1026...

Numerical Analysis of Steady Current and Temperature Distributions and Characteristics of Transverse Mode in VCSEL

Liu Shi'an, Lin Shiming, Kang Xuejun, Cheng Peng, Lu Jianzu， Wang Qiming

Chin. J. Semicond. 1999, 20(11): 1034-1039

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1034.

L Shi\'an, L S ming, K X jun, C Peng, L J W Qiming. Numerical Analysis of Steady Current and Temperature Distributions and Characteristics of Transverse Mode in VCSEL[J]. Chin. J. Semicond., 1999, 20(11): 1034..Export: BibTex EndNote

L Shi\'an, L S ming, K X jun, C Peng, L J W Qiming. Numerical Analysis of Steady Current and Temperature Distributions and Characteristics of Transverse Mode in VCSEL[J]. Chin. J. Semicond., 1999, 20(11): 1034...

SiC肖特基势垒二极管的研制

张玉明, 张义门, 罗晋生

Chin. J. Semicond. 1999, 20(11): 1040-1043

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1040.

张玉明, 张义门, 罗晋生. SiC肖特基势垒二极管的研制[J]. Chin. J. Semicond., 1999, 20(11): 1040..Export: BibTex EndNote

张玉明, 张义门, 罗晋生. SiC肖特基势垒二极管的研制[J]. Chin. J. Semicond., 1999, 20(11): 1040...

铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀

刘秦, 林殷茵, 吴小清, 张良莹, 姚熹

Chin. J. Semicond. 1999, 20(11): 1044-1048

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(11): 1044.

刘秦, 林殷茵, 吴小清, 张良莹, 姚熹. 铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀[J]. Chin. J. Semicond., 1999, 20(11): 1044..Export: BibTex EndNote

刘秦, 林殷茵, 吴小清, 张良莹, 姚熹. 铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀[J]. Chin. J. Semicond., 1999, 20(11): 1044...

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