Chin. J. Semicond. > 1999, Volume 20 > Issue 11 > 999-1003
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SI-GaAs材料的电学补偿

赖占平 , 齐德格 , 高瑞良 , 杜庚娜 , 刘晏凤 and 刘建宁

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(11): 999-1003
      赖占平, 齐德格, 高瑞良, 杜庚娜, 刘晏凤, 刘建宁. SI-GaAs材料的电学补偿[J]. 半导体学报(英文版), 1999, 20(11): 999-1003.
      Citation:
      赖占平, 齐德格, 高瑞良, 杜庚娜, 刘晏凤, 刘建宁. SI-GaAs材料的电学补偿[J]. 半导体学报(英文版), 1999, 20(11): 999-1003.
      shu

      • Received Date: 2015-08-19

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