Chin. J. Semicond. > 1999, Volume 20 > Issue 11 > 977-982
|

CONTENTS

VDMOS均匀掺杂外延区的优化设计

何进 , 王新 and 陈星弼

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2500 Times PDF downloads: 2251 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 November 1999

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1999  >  20(11): 977-982
      何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. 半导体学报(英文版), 1999, 20(11): 977-982.
      Citation:
      何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. 半导体学报(英文版), 1999, 20(11): 977-982.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return