Chin. J. Semicond. > 1999, Volume 20 > Issue 11 > 977-982
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VDMOS均匀掺杂外延区的优化设计

何进 , 王新 and 陈星弼

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(11): 977-982
      何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. 半导体学报(英文版), 1999, 20(11): 977-982.
      Citation:
      何进, 王新, 陈星弼. VDMOS均匀掺杂外延区的优化设计[J]. 半导体学报(英文版), 1999, 20(11): 977-982.
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      • Received Date: 2015-08-19

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