Chin. J. Semicond. > 1999, Volume 20 > Issue 11 > 1010-1014
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图形衬底上硅区双离子束选择淀积Co研究

吴正龙 , 姚振钰 , 刘志凯 , 张建辉 , 秦复光 and 林兰英

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(11): 1010-1014
      吴正龙, 姚振钰, 刘志凯, 张建辉, 秦复光, 林兰英. 图形衬底上硅区双离子束选择淀积Co研究[J]. 半导体学报(英文版), 1999, 20(11): 1010-1014.
      Citation:
      吴正龙, 姚振钰, 刘志凯, 张建辉, 秦复光, 林兰英. 图形衬底上硅区双离子束选择淀积Co研究[J]. 半导体学报(英文版), 1999, 20(11): 1010-1014.
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      • Received Date: 2015-08-19

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