Chin. J. Semicond. > 1999, Volume 20 > Issue 11 > 957-962
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质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响

黄万霞 , 林理彬 , 曾一平 and 潘量

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(11): 957-962
      黄万霞, 林理彬, 曾一平, 潘量. 质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响[J]. 半导体学报(英文版), 1999, 20(11): 957-962.
      Citation:
      黄万霞, 林理彬, 曾一平, 潘量. 质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响[J]. 半导体学报(英文版), 1999, 20(11): 957-962.
      shu

      • Received Date: 2015-08-19

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