Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1088-1092
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p型扩散区(SiO_2/Si系扩Ga)的俄歇分析

孙瑛 and 王凤英

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Key words: SiO2层, 镓扩散, 重金属杂质, 俄歇分析

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1088-1092
      孙瑛, 王凤英. p型扩散区(SiO_2/Si系扩Ga)的俄歇分析[J]. 半导体学报(英文版), 2002, 23(10): 1088-1092.
      Citation:
      孙瑛, 王凤英. p型扩散区(SiO_2/Si系扩Ga)的俄歇分析[J]. 半导体学报(英文版), 2002, 23(10): 1088-1092.
      shu

      • Received Date: 2015-08-19

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