Chin. J. Semicond. > 1988, Volume 9 > Issue 4 > 412-420
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氮化后退火——一种提高超薄热氮化SiO_2膜性能的有效方法

吾立峰 , 熊大菁 , 顾祖毅 , 靳东明 , 刘理天 and 何小寅

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(4): 412-420
      吾立峰, 熊大菁, 顾祖毅, 靳东明, 刘理天, 何小寅. 氮化后退火——一种提高超薄热氮化SiO_2膜性能的有效方法[J]. 半导体学报(英文版), 1988, 9(4): 412-420.
      Citation:
      吾立峰, 熊大菁, 顾祖毅, 靳东明, 刘理天, 何小寅. 氮化后退火——一种提高超薄热氮化SiO_2膜性能的有效方法[J]. 半导体学报(英文版), 1988, 9(4): 412-420.
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      • Received Date: 2015-08-19

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