A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer

Lü Jihe; Huang Hui; Ren Xiaomin; Miao Ang; Li Yiqun; Wang Rui; Huang Yongqing; Wang Qi

Article Navigation > Journal of Semiconductors > 2007 > 28(11): 1807-1810

Lü Jihe, Huang Hui, Ren Xiaomin, Miao Ang, Li Yiqun, Wang Rui, Huang Yongqing, Wang Qi. A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer[J]. Journal of Semiconductors, 2007, 28(11): 1807-1810. ****Lü J, Huang H, Ren X M, Miao A, Li Y Q, Wang R, Huang Y Q, Wang Q. A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer[J]. Chin. J. Semicond., 2007, 28(11): 1807.

Citation:

Lü J, Huang H, Ren X M, Miao A, Li Y Q, Wang R, Huang Y Q, Wang Q. A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer[J]. Chin. J. Semicond., 2007, 28(11): 1807.

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A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer

Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China
Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China

Received Date: 2015-08-18
Accepted Date: 2007-05-13
Revised Date: 2007-06-21
Published Date: 2007-10-24

Abstract

Abstract

We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.53Ga0.47-As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure.High quality heteroepitaxy is realized by employing a thin low-temperature buffer layer,which is carried out in a series of experiments.A wavelength tuning range of 10.0nm,an external quantum efficiency of about 23%,a spectral linewidth of 0.8nm,and a 3dB bandwidth of 6.2GHz are simultaneously obtained in the device.
- heteroepitaxy,
- tunable,
- photodetector

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