| Citation: |
Wang Qing, Cao Yulian, He Guorong, Wei Xin, Qu Hongwei, Song Guofeng, Ma Wenquan, Chen Lianghui. Densely Packed High Power VCSEL Arrays[J]. Journal of Semiconductors, 2007, 28(11): 1803-1806.
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Wang Q, Cao Y L, He G R, Wei X, Qu H W, Song G F, Ma W Q, Chen L H. Densely Packed High Power VCSEL Arrays[J]. Chin. J. Semicond., 2007, 28(11): 1803.
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Densely Packed High Power VCSEL Arrays
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Abstract
The fabrication process of 980nm,densely packed,high power,VCSEL 2D-arrays is reported for the first time in mainland China.The individual elements of the arrays are arranged in a honeycomb-like layout,the mesa diameter of the element is 70μm,the oxide aperture is 30μm,and the center-to-center spacing of neighboring elements is 100μm.VCSEL arrays containing 7,19,and 37 elements are fabricated,and the characteristics of the threshold current and the far-field angle are discussed.Given CW operation at room temperature,these three kinds of arrays have 0.26,0.5,and 0.6W output power,respectively.With a 6A pulse current (30μs at 100Hz),the 37-elements array’s output power reaches 1.4W.-
Keywords:
- VCSEL,
- array,
- threshold current,
- far-field angle,
- high power
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References
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Proportional views
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