Citation: |
Liao Zaiyi, Pan Jiaoqing, Zhou Fan, Bian Jing, Zhu Hongliang, Zhao Lingjuan, Wang Wei. A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator[J]. Journal of Semiconductors, 2008, 29(5): 898-902.
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Liao Z Y, Pan J Q, Zhou F, Bian J, Zhu H L, Zhao L J, Wang W. A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator[J]. J. Semicond., 2008, 29(5): 898.
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A Novel Optical Gate by Integration of a Photodiodeand an Electroabsorption Modulator
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Abstract
A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator.The gate shows an excellent DC logic "and" function with different load resistors.Its dynamical characteristics without packaging have also been measured.We observed a dynamic extinction ratio of over 7dB with a 950Ω load resistor and a 7mW control light power at 622Mbit/s. -
References
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Proportional views