Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 456-459
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双极器件中硅基区和锗硅基区的禁带变窄量

金海岩 and 张利春

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Key words: 双极晶体管, 锗硅基区, 禁带变窄量

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 456-459
      金海岩, 张利春. 双极器件中硅基区和锗硅基区的禁带变窄量[J]. 半导体学报(英文版), 2001, 22(4): 456-459.
      Citation:
      金海岩, 张利春. 双极器件中硅基区和锗硅基区的禁带变窄量[J]. 半导体学报(英文版), 2001, 22(4): 456-459.
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      • Received Date: 2015-08-20

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