Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 456-459
|

CONTENTS

双极器件中硅基区和锗硅基区的禁带变窄量

金海岩 and 张利春

+ Author Affiliations

PDF

Key words: 双极晶体管, 锗硅基区, 禁带变窄量

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2495 Times PDF downloads: 1255 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 456-459
      金海岩, 张利春. 双极器件中硅基区和锗硅基区的禁带变窄量[J]. 半导体学报(英文版), 2001, 22(4): 456-459.
      Citation:
      金海岩, 张利春. 双极器件中硅基区和锗硅基区的禁带变窄量[J]. 半导体学报(英文版), 2001, 22(4): 456-459.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return