| Citation: |
Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, Wang Jun, Zhang Nanhong, Xiao Hongling, Wang Xiaoliang, Zeng Yiping. Growth of GaN on γ-Al2O3/Si(001) Composite Substrates[J]. Journal of Semiconductors, 2005, 26(12): 2378-2384.
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Liu Z, Wang J X, Li J M, Liu H X, Wang Q Y, Wang J, Zhang N H, Xiao H L, Wang X L, Zeng Y P. Growth of GaN on γ-Al2O3/Si(001) Composite Substrates[J]. Chin. J. Semicond., 2005, 26(12): 2378.
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Growth of GaN on γ-Al2O3/Si(001) Composite Substrates
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Abstract
Crack-free GaN epilayers on Si(001) substrates are obtained by molecular beam epitaxy with novel γ-Al2O3 materials as intermediate layers.GaN growth along c-director is realized and a hexagonal single crystalline GaN is achieved.Experimental results indicate that pretreatment with Al and a high temperature AlN layer can improve the quality of GaN and a low temperature AlN layer can improve the surface roughness of GaN.This provides an effective method to overcome the difficulties of GaN growth on Si(001) substrates.-
Keywords:
- GaN,
- γ-Al2O3/Si(001),
- buffer,
- MBE
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References
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Proportional views
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